A 7.5 GS/s flash ADC and a 10.24 GS/s time-interleaved ADC for backplane receivers in 65 nm CMOS

Citation:

Hayun Chung, Toprak Deniz, Alexander Rylyakov, John Bulzacchelli, Daniel Friedman, and Gu Wei. 8/2015. “A 7.5 GS/s flash ADC and a 10.24 GS/s time-interleaved ADC for backplane receivers in 65 nm CMOS.” Analog Integrated Circuits and Signal Processing, 85, 2, Pp. 299–310. Publisher's Version

Abstract:

This paper presents a 7.5 GS/s, 4.5 bit flash analog-to-digital converter (ADC) for high-speed backplane communication. A two-stage track-and-hold (T/H) structure enables high input bandwidth and low power consumption at the same time. A sampling clock duty cycle control technique, which allocates more tracking time to the bandwidth-limited second T/H stage, facilitates high sampling rates. A digital offset correction scheme compensates both random and systematic offsets due to process variation and T/H amplifier gain nonlinearity, simultaneously. Two test-chip prototypes were fabricated in a 65 nm CMOS process. Experimental results of a standalone ADC chip demonstrate 3.8 effective number of bits (ENOB) at 7.5 GS/s. The figure-of-merit (FOM) of the standalone ADC is 0.49 pJ/conversion-step. The second test chip combines two ADCs together in order to demonstrate a time-interleaved ADC (TI-ADC) for use in high-speed backplane receivers. The TI-ADC operates at 10.24 GS/s while achieving 3.5 ENOB and 0.65 pJ/conversion-step FOM.
Last updated on 04/24/2022